A PROPOSED STRUCTURE FOR COLLECTOR TRANSIT-TIME REDUCTION IN ALGAAS-GAAS BIPOLAR-TRANSISTORS

[1] ANKRI D, 1982, ELECTRON LETT 0819, P750

[2] ASBECK PM, 1982, IEEE ELECTR DEVICE L, V3, P403

[3] ASBECK PM, 1983, P GAAS IC S, P170

[4] HIGH-PERFORMANCE P-N-P ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS - A THEORETICAL-ANALYSIS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (02) : 108 - 111

[5] Kofol S., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P198

[6] TRANSIENT VELOCITY CHARACTERISTICS OF ELECTRONS IN GAAS WITH GAMMA-L-X CONDUCTION-BAND ORDERING [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 4064 - 4068

[7] THEORY OF A WIDE-GAP EMITTER FOR TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (11): : 1535 - 1537

[8] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J]. PROCEEDINGS OF THE IEEE, 1982, 70 (01) : 13 - 25

[9] MONTE-CARLO SIMULATION OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (09) : 362 - 364

[1] ANKRI D, 1982, ELECTRON LETT 0819, P750

[2] ASBECK PM, 1982, IEEE ELECTR DEVICE L, V3, P403

[3] ASBECK PM, 1983, P GAAS IC S, P170

[4] HIGH-PERFORMANCE P-N-P ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS - A THEORETICAL-ANALYSIS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (02) : 108 - 111

[5] Kofol S., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P198

[6] TRANSIENT VELOCITY CHARACTERISTICS OF ELECTRONS IN GAAS WITH GAMMA-L-X CONDUCTION-BAND ORDERING [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 4064 - 4068

[7] THEORY OF A WIDE-GAP EMITTER FOR TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (11): : 1535 - 1537

[8] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J]. PROCEEDINGS OF THE IEEE, 1982, 70 (01) : 13 - 25

[9] MONTE-CARLO SIMULATION OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (09) : 362 - 364