HIGH-PERFORMANCE P-N-P ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS - A THEORETICAL-ANALYSIS

被引：34

作者：

HUTCHBY, JA

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 02期

关键词：

D O I：

10.1109/EDL.1986.26310

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：108 / 111

页数：4

共 23 条

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