SURFONS AND ELECTRON MOBILITY IN A SEMICONDUCTOR INVERSION LAYER

被引：23

作者：

EZAWA, H

KAWAJI, S

NAKAMURA, K

机构：

来源：

SURFACE SCIENCE | 1971年 / 27卷 / 01期

关键词：

D O I：

10.1016/0039-6028(71)90173-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

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页码：218 / &

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共 11 条

[1] ELECTRON MOBILITY IN A SEMICONDUCTOR INVERSION LAYER - POSSIBLE CONTRIBUTION FROM BULK PHONONS
EZAWA, H
KAWAJI, S
KURODA, T
NAKAMURA, K
[J]. SURFACE SCIENCE, 1971, 24 (02) : 659 - &
[2] ELECTRONS AND SURFONS IN A SEMICONDUCTOR INVERSION LAYER
EZAWA, H
KURODA, T
NAKAMURA, K
[J]. SURFACE SCIENCE, 1971, 24 (02) : 654 - &
[3] EZAWA H, TO BE PUBLISHED
[4] TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES
FANG, FF
FOWLER, AB
[J]. PHYSICAL REVIEW, 1968, 169 (03): : 619 - +
[5] TRANSPORT AND DEFORMATION-POTENTIAL THEORY FOR MANY-VALLEY SEMICONDUCTORS WITH ANISOTROPIC SCATTERING
HERRING, C
VOGT, E
[J]. PHYSICAL REVIEW, 1956, 101 (03): : 944 - 961
[6] 2-DIMENSIONAL LATTICE SCATTERING MOBILITY IN A SEMICONDUCTOR INVERSION LAYER
KAWAJI, S
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1969, 27 (04) : 906 - &
[7] KAWAJI S, UNPUBLISHED
[8] DETERMINATION OF DEFORMATION POTENTIAL CONSTANTS FROM ELECTRON CYCLOTRON RESONANCE IN GERMANIUM AND SILICON
MURASE, K
ENJOIJI, K
OTSUKA, E
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1970, 29 (05) : 1248 - &
[9] SATO T, TOBE PUBLISHED
[10] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT
STERN, F
HOWARD, WE
[J]. PHYSICAL REVIEW, 1967, 163 (03): : 816 - &