MILLIMETRIC AND FAR-INFRARED CONDUCTIVITY OF P-SI - CASE FOR FREQUENCY-DEPENDENT CARRIER RELAXATION-TIME

被引：3

作者：

GOPAL, V

机构：

[1] Solid State Physics Laboratory, Delhi, 110007, Lucknow Road, Timarpur

来源：

INFRARED PHYSICS | 1979年 / 19卷 / 06期

关键词：

D O I：

10.1016/0020-0891(79)90014-9

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

It is shown that by allowing the carrier relaxation time in the Drude theory to be frequency-dependent, an overall improvement in the agreement between the theoretical and experimental variation of conductivity of p-Si is obtained. © 1979.

引用

页码：689 / 691

页数：3