MILLIMETRIC AND FAR INFRARED CONDUCTIVITY OF P-SI EVIDENCE FOR INTERBAND-TRANSITIONS

被引：5

作者：

VINDEVOGHEL, J

VINDEVOGHEL, M

LEROY, Y

机构：

[1] Centre Hyperfrequences, Semiconducteurs. ERA au C.N.R.S. n454. Université de Lille I, 59650 Villeneuve d'Ascq, Bâtiment P 3

来源：

INFRARED PHYSICS | 1978年 / 18卷 / 02期

关键词：

D O I：

10.1016/0020-0891(78)90017-9

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Studies of transmission coefficient and conductivity of p-Si in the millimetric and far infrared ranges (2.5cm-1-400cm-1) allow the mean momentum relaxation-time of the semi-conductor to be determined without previous knowledge of hole concentration and effective masses. At high frequencies (70-400 cm-1), the experimental spectrum σ(ω) shows an increase in conductivity in addition to the one due to free-carrier relaxation mechanisms, It is caused by interband transitions between heavy holes, light holes and split-off bands. © 1978.

引用

页码：99 / 105

页数：7

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