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- [21] von Borzeszkowski J., 1974, Physica Status Solidi B, V61, P607, DOI 10.1002/pssb.2220610226
- [22] WALLES S, 1963, ARK FYS, V25, P33
MILLIMETRIC AND FAR INFRARED CONDUCTIVITY OF P-SI EVIDENCE FOR INTERBAND-TRANSITIONS
被引：5
作者：
VINDEVOGHEL, J
VINDEVOGHEL, M
LEROY, Y
机构：
[1] Centre Hyperfrequences, Semiconducteurs. ERA au C.N.R.S. n454. Université de Lille I, 59650 Villeneuve d'Ascq, Bâtiment P 3
来源：
INFRARED PHYSICS
|
1978年
/
18卷
/
02期
关键词：
D O I：
10.1016/0020-0891(78)90017-9
中图分类号：
O43 [光学];
学科分类号：
070207 ;
0803 ;
摘要：
Studies of transmission coefficient and conductivity of p-Si in the millimetric and far infrared ranges (2.5cm-1-400cm-1) allow the mean momentum relaxation-time of the semi-conductor to be determined without previous knowledge of hole concentration and effective masses. At high frequencies (70-400 cm-1), the experimental spectrum σ(ω) shows an increase in conductivity in addition to the one due to free-carrier relaxation mechanisms, It is caused by interband transitions between heavy holes, light holes and split-off bands. © 1978.
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页码：99 / 105
页数：7
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