AES-SIMS(IMA) STUDY OF PHYSICAL AND CHEMICAL SPUTTERING PROCESSES OF LOW-Z MATERIALS BY ENERGETIC IONS

被引：13

作者：

MOHRI, M ^{[1
]}

WATANABE, K ^{[1
]}

YAMASHINA, T ^{[1
]}

DOI, H ^{[1
]}

HAYAKAWA, K ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN

来源：

JOURNAL OF NUCLEAR MATERIALS | 1979年 / 85-6卷 / DEC期

关键词：

D O I：

10.1016/0022-3115(79)90422-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Interactions of energetic ions with surfaces of silicon carbide have been studied under ultrahigh vacuum conditions in terms of physical and chemical sputtering processes by means of AES-SIMS(IMA) combined systems. The sputtering yield of silicon carbide with hydrogen, helium and argon ions was measured by a volumetric method as a function of target temperature. The sputtering yield was found to have a maximum at around 700° C for hydrogen ions, while it increased monotonically with temperature for helium and argon ions. The differing temperature dependency can be attributed to different sputtering processes. © 1979.

引用

页码：1185 / 1189

页数：5

共 14 条

[1] COLLECTION AND SPUTTERING EXPERIMENTS WITH NOBLE GAS IONS [J].