SILICON-CARBIDE HIGH-VOLTAGE (400 V) SCHOTTKY-BARRIER DIODES

被引：119

作者：

BHATNAGAR, M

MCLARTY, PK

BALIGA, BJ

机构：

[1] Power Semiconductor Research Center, North Carolina State University, Raleigh

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 10期

关键词：

D O I：

10.1109/55.192814

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes the fabrication and characteristics of the first high-voltage (400 V) silicon-carbide (6H-SiC) Schottky barrier diodes. Measurements of the forward I-V characteristics of these diodes demonstrate a low forward voltage drop of approximately 1.1 V at an on-state current density of 100 A/cm2 for a temperature range of 25 to 200-degrees-C. The reverse I-V characteristics of these devices exhibit a sharp breakdown, with breakdown voltages exceeding 400 V at 25-degrees-C. In addition, these diodes are shown to have superior reverse recovery characteristics when compared with high-speed silicon P-i-N rectifiers.

引用

页码：501 / 503

页数：3

共 7 条

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[3] EDMOND JA, 1991, 4TH INT C AM CRYST S
[4] HIGH-VOLTAGE 6H-SIC P-N-JUNCTION DIODES
MATUS, LG
POWELL, JA
SALUPO, CS
[J]. APPLIED PHYSICS LETTERS, 1991, 59 (14) : 1770 - 1772
[5] PT AND PTSIX SCHOTTKY CONTACTS ON N-TYPE BETA-SIC
PAPANICOLAOU, NA
CHRISTOU, A
GIPE, ML
[J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (09) : 3526 - 3530
[6] Rhoderick E H., 1988, METAL SEMICONDUCTOR
[7] SCHRODER DK, 1990, SEMICONDUCTOR MAT DE, P131

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