PT AND PTSIX SCHOTTKY CONTACTS ON N-TYPE BETA-SIC

被引：63

作者：

PAPANICOLAOU, NA

CHRISTOU, A

GIPE, ML

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 09期

关键词：

D O I：

10.1063/1.342626

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3526 / 3530

页数：5

共 16 条

[1] REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-SILICIDE SCHOTTKY DIODES [J].

ANDREWS, JM ;

LEPSELTER, MP .

SOLID-STATE ELECTRONICS, 1970, 13 (07) :1011-+

[2]

BEMUDEZ VM, 1983, APPL SURF SCI, V17, P12

[3] ANALYTICAL STUDY OF PLATINUM SILICIDE FORMATION [J].

BINDELL, JB ;

COLBY, JW ;

WONSIDLER, DR ;

POATE, JM ;

CONLEY, DK ;

TISONE, TC .

THIN SOLID FILMS, 1976, 37 (03) :441-452

[4] ELECTRICAL CONTACTS TO BETA-SILICON CARBIDE THIN-FILMS [J].

EDMOND, JA ;

RYU, J ;

GLASS, JT ;

DAVIS, RF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (02) :359-362

[5] HIGH-FIELD TRANSPORT IN WIDE-BAND-GAP SEMICONDUCTORS [J].

FERRY, DK .

PHYSICAL REVIEW B, 1975, 12 (06) :2361-2369

[6] SURFACE-BARRIER DIODES ON SILICON CARBIDE [J].

HAGEN, SH .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (03) :1458-&

[7] INFRARED REFLECTANCE EVALUATION OF CHEMICALLY VAPOR-DEPOSITED BETA-SIC FILMS GROWN ON SI SUBSTRATES [J].

HOLM, RT ;

KLEIN, PH ;

NORDQUIST, PER .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (04) :1479-1485

[8] THE EFFECT OF HEAT-TREATMENT ON AU SCHOTTKY CONTACTS ON BETA-SIC [J].

IOANNOU, DE ;

PAPANICOLAOU, NA ;

NORDQUIST, PE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (08) :1694-1699

[9] GROWTH AND PROPERTIES OF BETA-SIC SINGLE CRYSTALS [J].

NELSON, WE ;

HALDEN, FA ;

ROSENGREEN, A .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) :333-+

[10] PRODUCTION OF LARGE-AREA SINGLE-CRYSTAL WAFERS OF CUBIC SIC FOR SEMICONDUCTOR-DEVICES [J].

NISHINO, S ;

POWELL, JA ;

WILL, HA .

APPLIED PHYSICS LETTERS, 1983, 42 (05) :460-462

← 1 2 →