X-RAY-DIFFRACTION DETERMINATION OF INTERFACIAL ROUGHNESS CORRELATION IN SIXGE1-X/SI AND GAAS/ALXGA1-XAS SUPERLATTICES

被引:18
作者
PHANG, YH
SAVAGE, DE
KUECH, TF
LAGALLY, MG
PARK, JS
WANG, KL
机构
[1] UNIV WISCONSIN,MADISON,WI 53706
[2] UNIV CALIF LOS ANGELES,LOS ANGELES,CA 90024
关键词
D O I
10.1063/1.106784
中图分类号
O59 [应用物理学];
学科分类号
摘要
Vertically correlated roughness in SixGe1-x/Si and GaAs/AlxGa1-xAs superlattice films has been investigated. In all films, a significant fraction of the total roughness is correlated with lateral correlation lengths from approximately 1000 to approximately 4500 angstrom.
引用
收藏
页码:2986 / 2988
页数:3
相关论文
共 16 条
  • [11] X-RAY AND NEUTRON-SCATTERING FROM ROUGH SURFACES
    SINHA, SK
    SIROTA, EB
    GAROFF, S
    STANLEY, HB
    [J]. PHYSICAL REVIEW B, 1988, 38 (04): : 2297 - 2311
  • [12] SURFACE-TOPOGRAPHY CHANGES DURING THE GROWTH OF GAAS BY MOLECULAR-BEAM EPITAXY
    SMITH, GW
    PIDDUCK, AJ
    WHITEHOUSE, CR
    GLASPER, JL
    KEIR, AM
    PICKERING, C
    [J]. APPLIED PHYSICS LETTERS, 1991, 59 (25) : 3282 - 3284
  • [13] Spiller E., 1985, Proceedings of the SPIE - The International Society for Optical Engineering, V563, P221, DOI 10.1117/12.949671
  • [14] X-RAY-SCATTERING FROM INTERFACIAL ROUGHNESS IN MULTILAYER STRUCTURES
    STEARNS, DG
    [J]. JOURNAL OF APPLIED PHYSICS, 1992, 71 (09) : 4286 - 4298
  • [15] IMPROVED ASSESSMENT OF STRUCTURAL-PROPERTIES OF ALXGA1-XAS/GAAS HETEROSTRUCTURES AND SUPERLATTICES BY DOUBLE-CRYSTAL X-RAY-DIFFRACTION
    TAPFER, L
    PLOOG, K
    [J]. PHYSICAL REVIEW B, 1986, 33 (08): : 5565 - 5574
  • [16] DOES LUMINESCENCE SHOW SEMICONDUCTOR INTERFACES TO BE ATOMICALLY SMOOTH
    WARWICK, CA
    JAN, WY
    OURMAZD, A
    HARRIS, TD
    [J]. APPLIED PHYSICS LETTERS, 1990, 56 (26) : 2666 - 2668