TIME-RESOLVED INFRARED RADIOMETRY OF LASER-HEATED SILICON

被引：9

作者：

CHO, KM

DAVIS, CC

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1989年 / 25卷 / 05期

关键词：

D O I：

10.1109/3.28007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1112 / 1117

页数：6

共 14 条

[1]

CARSLAW HS, 1959, CONDUCTION HEAT SOLI, P353

[2] INFRARED REFLECTIVITY PROBING OF THERMAL AND SPATIAL PROPERTIES OF LASER-GENERATED CARRIERS IN GERMANIUM [J].

GALLANT, MI ;

VANDRIEL, HM .

PHYSICAL REVIEW B, 1982, 26 (04) :2133-2146

[3] ANALYSIS OF THE INFRARED PLASMA REFLECTIVITY MINIMUM BY A SELF-CONSISTENT METHOD [J].

JEVTIC, MM ;

TOSIC, DI ;

TJAPKIN, DA .

INFRARED PHYSICS, 1985, 25 (04) :619-624

[4] REMOTE MONITORING OF THERMAL-CONDUCTIVITY OF A POWDER BY A FLASH RADIOMETRY TECHNIQUE [J].

LEUNG, WP ;

TAM, AC .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (04) :2227-2229

[5] THERMAL CONDUCTION AT A CONTACT INTERFACE MEASURED BY PULSED PHOTOTHERMAL RADIOMETRY [J].

LEUNG, WP ;

TAM, AC .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (09) :4505-4510

[6] TECHNIQUES OF FLASH RADIOMETRY [J].

LEUNG, WP ;

TAM, AC .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (01) :153-161

[7]

LONG FH, 1987, APPL PHYS LETT, V51, P2077

[8] OPTICAL HEATING IN SEMICONDUCTORS [J].

MEYER, JR ;

BARTOLI, FJ ;

KRUER, MR .

PHYSICAL REVIEW B, 1980, 21 (04) :1559-1568

[9] OPTICAL HEATING IN SEMICONDUCTORS - LASER DAMAGE IN GE, SI, INSB, AND GAAS [J].

MEYER, JR ;

KRUER, MR ;

BARTOLI, FJ .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (10) :5513-5522

[10] KINETICS OF PLASMAS AND MELTING INDUCED IN SILICON AND GERMANIUM BY NANOSECOND LASER-PULSES [J].

PRESTON, JS ;

VANDRIEL, HM .

PHYSICAL REVIEW B, 1984, 30 (04) :1950-1956

← 1 2 →