RELAXATION OF COHERENT STRAIN IN SI1-XGEX/SI SUPERLATTICES AND ALLOYS

被引：9

作者：

HAUENSTEIN, RJ ^{[1
]}

MILES, RH ^{[1
]}

CROKE, ET ^{[1
]}

MCGILL, TC ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91125

来源：

THIN SOLID FILMS | 1989年 / 183卷

关键词：

D O I：

10.1016/0040-6090(89)90432-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：79 / 86

页数：8

共 10 条

[1] X-RAY-DIFFRACTION OF STRAIN RELAXATION IN SI-SI1-XGEX HETEROSTRUCTURES [J].

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SONG, KC ;

MUNRO, K .

APPLIED PHYSICS LETTERS, 1989, 54 (04) :323-325

[2] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J].

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[3]

FREUND LB, 1988, FALL MRS M BOST

[4] STRAIN RELAXATION KINETICS IN SI1-XGEX/SI HETEROSTRUCTURES [J].

HAUENSTEIN, RJ ;

CLEMENS, BM ;

MILES, RH ;

MARSH, OJ ;

CROKE, ET ;

MCGILL, TC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04) :767-774

[5] VARIATION IN MISFIT DISLOCATION BEHAVIOR AS A FUNCTION OF STRAIN IN THE GESI SI SYSTEM [J].

HULL, R ;

BEAN, JC .

APPLIED PHYSICS LETTERS, 1989, 54 (10) :925-927

[6] STABILITY OF SEMICONDUCTOR STRAINED-LAYER SUPERLATTICES [J].

HULL, R ;

BEAN, JC ;

CERDEIRA, F ;

FIORY, AT ;

GIBSON, JM .

APPLIED PHYSICS LETTERS, 1986, 48 (01) :56-58

[7] DEFECTS IN EPITAXIAL MULTILAYERS .1. MISFIT DISLOCATIONS [J].

MATTHEWS, JW ;

BLAKESLEE, AE .

JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :118-125

[8] CORRECTION [J].

PEOPLE, R .

APPLIED PHYSICS LETTERS, 1986, 49 (04) :229-229

[9] X-RAY ROCKING CURVE ANALYSIS OF SUPERLATTICES [J].

SPERIOSU, VS ;

VREELAND, T .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) :1591-1600

[10]

TUPPEN CG, 1988, 2ND P INT S SIL MOL, P36

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