STRAIN RELAXATION KINETICS IN SI1-XGEX/SI HETEROSTRUCTURES

被引：30

作者：

HAUENSTEIN, RJ ^{[1
]}

CLEMENS, BM ^{[1
]}

MILES, RH ^{[1
]}

MARSH, OJ ^{[1
]}

CROKE, ET ^{[1
]}

MCGILL, TC ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91125

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 04期

关键词：

D O I：

10.1116/1.584598

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：767 / 774

页数：8

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