NATURE OF MISFIT DISLOCATION SOURCES IN STRAINED-LAYER SEMICONDUCTOR STRUCTURES

被引：39

作者：

DODSON, BW

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 05期

关键词：

D O I：

10.1063/1.99889

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：394 / 396

页数：3

共 21 条

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[5] CORRECTION [J].

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APPLIED PHYSICS LETTERS, 1988, 52 (10) :852-852

[6]

DODSON BW, UNPUB

[7] CRITICAL LAYER THICKNESS IN IN0.2GA0.8AS/GAAS SINGLE STRAINED QUANTUM-WELL STRUCTURES [J].

FRITZ, IJ ;

GOURLEY, PL ;

DAWSON, LR .

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[8] ROLE OF EXPERIMENTAL RESOLUTION IN MEASUREMENTS OF CRITICAL LAYER THICKNESS FOR STRAINED-LAYER EPITAXY [J].

FRITZ, IJ .

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[9]

Grabow M. H., 1987, Initial Stages of Epitaxial Growth. Symposium, P15

[10]

Hirth J.P., 1982, THEORY DISLOCATIONS

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