ROLE OF EXPERIMENTAL RESOLUTION IN MEASUREMENTS OF CRITICAL LAYER THICKNESS FOR STRAINED-LAYER EPITAXY

被引：151

作者：

FRITZ, IJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 14期

关键词：

D O I：

10.1063/1.98746

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1080 / 1081

页数：2

共 17 条

[1] PHOTOLUMINESCENCE OF INXGA1-XAS-GAAS STRAINED-LAYER SUPERLATTICES [J].

ANDERSON, NG ;

LAIDIG, WD ;

LIN, YF .

JOURNAL OF ELECTRONIC MATERIALS, 1985, 14 (02) :187-202

[2] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J].

BEAN, JC ;

FELDMAN, LC ;

FIORY, AT ;

NAKAHARA, S ;

ROBINSON, IK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :436-440

[3]

BURNS G, 1987, B AM PHYS SOC, V32, P636

[4] RAMAN-SCATTERING FROM GEXSI1-X/SI STRAINED-LAYER SUPERLATTICES [J].

CERDEIRA, F ;

PINCZUK, A ;

BEAN, JC ;

BATLOGG, B ;

WILSON, BA .

APPLIED PHYSICS LETTERS, 1984, 45 (10) :1138-1140

[5] CRITICAL LAYER THICKNESS IN IN0.2GA0.8AS/GAAS SINGLE STRAINED QUANTUM-WELL STRUCTURES [J].

FRITZ, IJ ;

GOURLEY, PL ;

DAWSON, LR .

APPLIED PHYSICS LETTERS, 1987, 51 (13) :1004-1006

[6] DEPENDENCE OF CRITICAL LAYER THICKNESS ON STRAIN FOR INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES [J].

FRITZ, IJ ;

PICRAUX, ST ;

DAWSON, LR ;

DRUMMOND, TJ ;

LAIDIG, WD ;

ANDERSON, NG .

APPLIED PHYSICS LETTERS, 1985, 46 (10) :967-969

[7]

GOURLEY PL, 1986, MATER RES SOC S P, V56, P229

[8] X-RAY STUDY OF MISFIT STRAIN RELAXATION IN LATTICE-MISMATCHED HETEROJUNCTIONS [J].

KAMIGAKI, K ;

SAKASHITA, H ;

KATO, H ;

NAKAYAMA, M ;

SANO, N ;

TERAUCHI, H .

APPLIED PHYSICS LETTERS, 1986, 49 (17) :1071-1073

[9] ONE-DIMENSIONAL SIGE SUPERLATTICE GROWN BY UHV EPITAXY [J].

KASPER, E ;

HERZOG, HJ ;

KIBBEL, H .

APPLIED PHYSICS, 1975, 8 (03) :199-205

[10] EFFECTS OF STRAIN AND LAYER THICKNESS ON THE GROWTH OF INXGA1-XAS-GAAS STRAINED-LAYER SUPERLATTICES [J].

LAIDIG, WD ;

PENG, CK ;

LIN, YF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02) :181-185

← 1 2 →