ATOMISTIC STUDY OF STRUCTURAL METASTABILITY IN COHERENTLY STRAINED SI-LIKE LAYERS

被引：16

作者：

DODSON, BW

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.35.5558

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5558 / 5562

页数：5

共 17 条

[1] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J].

BEAN, JC ;

FELDMAN, LC ;

FIORY, AT ;

NAKAHARA, S ;

ROBINSON, IK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :436-440

[2] INTERATOMIC POTENTIALS FOR SILICON STRUCTURAL ENERGIES [J].

BISWAS, R ;

HAMANN, DR .

PHYSICAL REVIEW LETTERS, 1985, 55 (19) :2001-2004

[3]

BRENNER DW, UNPUB

[4] ATOMISTIC MONTE-CARLO CALCULATION OF CRITICAL LAYER THICKNESS FOR COHERENTLY STRAINED SILICON-LIKE STRUCTURES [J].

DODSON, BW ;

TAYLOR, PA .

APPLIED PHYSICS LETTERS, 1986, 49 (11) :642-644

[5] DEVELOPMENT OF A MANY-BODY TERSOFF-TYPE POTENTIAL FOR SILICON [J].

DODSON, BW .

PHYSICAL REVIEW B, 1987, 35 (06) :2795-2798

[6] THERMAL RELAXATION OF METASTABLE STRAINED-LAYER GEXSI1-X/SI EPITAXY [J].

FIORY, AT ;

BEAN, JC ;

HULL, R ;

NAKAHARA, S .

PHYSICAL REVIEW B, 1985, 31 (06) :4063-4065

[7] ONE-DIMENSIONAL DISLOCATIONS .1. STATIC THEORY [J].

FRANK, FC ;

VANDERMERWE, JH .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1949, 198 (1053) :205-216

[8] DEPENDENCE OF CRITICAL LAYER THICKNESS ON STRAIN FOR INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES [J].

FRITZ, IJ ;

PICRAUX, ST ;

DAWSON, LR ;

DRUMMOND, TJ ;

LAIDIG, WD ;

ANDERSON, NG .

APPLIED PHYSICS LETTERS, 1985, 46 (10) :967-969

[9]

GRUNTHANER FJ, COMMUNICATION

[10]

Hamann D. R., UNPUB

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