INTERATOMIC POTENTIALS FOR SILICON STRUCTURAL ENERGIES

被引：289

作者：

BISWAS, R

HAMANN, DR

机构：

来源：

PHYSICAL REVIEW LETTERS | 1985年 / 55卷 / 19期

关键词：

D O I：

10.1103/PhysRevLett.55.2001

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2001 / 2004

页数：4

共 12 条

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