THEORY OF STATIC STRUCTURAL-PROPERTIES, CRYSTAL STABILITY, AND PHASE-TRANSFORMATIONS - APPLICATION TO SI AND GE

被引：766

作者：

YIN, MT

COHEN, ML

机构：

[1] UNIV CALIF BERKELEY, DEPT PHYS, BERKELEY, CA 94720 USA

[2] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB, DIV MAT & MOLEC RES, BERKELEY, CA 94720 USA

来源：

PHYSICAL REVIEW B | 1982年 / 26卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.26.5668

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5668 / 5687

页数：20

共 87 条

[1] ELECTRON-DISTRIBUTION IN SILICON .1. EXPERIMENT [J].

ALDRED, PJE ;

HART, M .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1973, 332 (1589) :223-+

[2] USE OF ULTRASONIC MEASUREMENTS UNDER MODEST PRESSURE TO ESTIMATE COMPRESSION AT HIGH PRESSURE [J].

ANDERSON, OL .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (03) :547-&

[3] PRESSURE-INDUCED STRUCTURAL TRANSITIONS IN PARTIALLY IONIC SEMICONDUCTORS - SELF-CONSISTENT PSEUDOPOTENTIAL APPROACH TO ZNSE [J].

ANDREONI, W ;

MASCHKE, K .

PHYSICAL REVIEW B, 1980, 22 (10) :4816-4824

[4] EFFECT OF PRESSURE ON RAMAN SHIFT IN GE [J].

ASAUMI, K ;

MINOMURA, S .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1978, 45 (03) :1061-1062

[5] HIGH-PRESSURE TRANSITIONS OF GERMANIUM AND A NEW HIGH-PRESSURE FORM OF GERMANIUM [J].

BATES, CH ;

DACHILLE, F ;

ROY, R .

SCIENCE, 1965, 147 (3660) :860-&

[6]

BREWER L, LBL3720 REP

[7] A NEW DENSE FORM OF SOLID GERMANIUM [J].

BUNDY, FP ;

KASPER, JS .

SCIENCE, 1963, 139 (355) :340-&

[8] PHASE DIAGRAMS OF SILICON AND GERMANIUM TO 200 KBAR 1000 DEGREE C [J].

BUNDY, FP .

JOURNAL OF CHEMICAL PHYSICS, 1964, 41 (12) :3809-&

[9] SPECIAL POINTS IN BRILLOUIN ZONE [J].

CHADI, DJ ;

COHEN, ML .

PHYSICAL REVIEW B, 1973, 8 (12) :5747-5753

[10] ELECTRONIC-STRUCTURE OF SILICON [J].

CHELIKOWSKY, JR ;

COHEN, ML .

PHYSICAL REVIEW B, 1974, 10 (12) :5095-5107

← 1 2 3 4 5 6 7 8 9 →