DEVELOPMENT OF A MANY-BODY TERSOFF-TYPE POTENTIAL FOR SILICON

[1] ABELL GC, 1984, PHYS REV B, V31, P6184

[2] Interaction of the van der Waals type between three atoms [J]. JOURNAL OF CHEMICAL PHYSICS, 1943, 11 (06) : 299 - 300

[3] BINDER K, 1984, APPLICATIONS MONTE C

[4] INTERATOMIC POTENTIALS FOR SILICON STRUCTURAL ENERGIES [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (19) : 2001 - 2004

[5] ATOMISTIC MONTE-CARLO CALCULATION OF CRITICAL LAYER THICKNESS FOR COHERENTLY STRAINED SILICON-LIKE STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1986, 49 (11) : 642 - 644

[6] UNIVERSAL SCALING RELATIONS IN COMPRESSIBILITY OF SOLIDS [J]. PHYSICAL REVIEW B, 1987, 35 (06): : 2619 - 2625

[7] EVALUATION OF THE STILLINGER-WEBER CLASSICAL INTERACTION POTENTIAL FOR TETRAGONAL SEMICONDUCTORS IN NONIDEAL ATOMIC CONFIGURATIONS [J]. PHYSICAL REVIEW B, 1986, 33 (10): : 7361 - 7363

[8] Harrison W. A., 1980, ELECTRONIC STRUCTURE

[9] OPTIMIZATION BY SIMULATED ANNEALING [J]. SCIENCE, 1983, 220 (4598) : 671 - 680

[10] FACETING AT THE SILICON (100) CRYSTAL-MELT INTERFACE - THEORY AND EXPERIMENT [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (02) : 155 - 158

[1] ABELL GC, 1984, PHYS REV B, V31, P6184

[2] Interaction of the van der Waals type between three atoms [J]. JOURNAL OF CHEMICAL PHYSICS, 1943, 11 (06) : 299 - 300

[3] BINDER K, 1984, APPLICATIONS MONTE C

[4] INTERATOMIC POTENTIALS FOR SILICON STRUCTURAL ENERGIES [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (19) : 2001 - 2004

[5] ATOMISTIC MONTE-CARLO CALCULATION OF CRITICAL LAYER THICKNESS FOR COHERENTLY STRAINED SILICON-LIKE STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1986, 49 (11) : 642 - 644

[6] UNIVERSAL SCALING RELATIONS IN COMPRESSIBILITY OF SOLIDS [J]. PHYSICAL REVIEW B, 1987, 35 (06): : 2619 - 2625

[7] EVALUATION OF THE STILLINGER-WEBER CLASSICAL INTERACTION POTENTIAL FOR TETRAGONAL SEMICONDUCTORS IN NONIDEAL ATOMIC CONFIGURATIONS [J]. PHYSICAL REVIEW B, 1986, 33 (10): : 7361 - 7363

[8] Harrison W. A., 1980, ELECTRONIC STRUCTURE

[9] OPTIMIZATION BY SIMULATED ANNEALING [J]. SCIENCE, 1983, 220 (4598) : 671 - 680

[10] FACETING AT THE SILICON (100) CRYSTAL-MELT INTERFACE - THEORY AND EXPERIMENT [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (02) : 155 - 158