EVALUATION OF THE STILLINGER-WEBER CLASSICAL INTERACTION POTENTIAL FOR TETRAGONAL SEMICONDUCTORS IN NONIDEAL ATOMIC CONFIGURATIONS

被引：49

作者：

DODSON, BW

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.33.7361

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：7361 / 7363

页数：3

相关论文

共 8 条

[1] MIGRATION OF INTERSTITIALS IN SILICON
BARAFF, GA
SCHLUTER, M
[J]. PHYSICAL REVIEW B, 1984, 30 (06): : 3460 - 3469
[2] INTERATOMIC POTENTIALS FOR SILICON STRUCTURAL ENERGIES
BISWAS, R
HAMANN, DR
[J]. PHYSICAL REVIEW LETTERS, 1985, 55 (19) : 2001 - 2004
[3] DODSON BW, UNPUB
[4] Harrison W. A., 1980, ELECTRONIC STRUCTURE
[5] SURFACE REACTIONS OF SILICON WITH ALUMINUM AND WITH INDIUM
LANDER, JJ
MORRISON, J
[J]. SURFACE SCIENCE, 1964, 2 : 553 - 565
[6] STRAINED-LAYER SUPER-LATTICES FROM LATTICE MISMATCHED MATERIALS
OSBOURN, GC
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) : 1586 - 1589
[7] COMPUTER-SIMULATION OF LOCAL ORDER IN CONDENSED PHASES OF SILICON
STILLINGER, FH
WEBER, TA
[J]. PHYSICAL REVIEW B, 1985, 31 (08): : 5262 - 5271
[8] NEW EMPIRICAL-MODEL FOR THE STRUCTURAL-PROPERTIES OF SILICON
TERSOFF, J
[J]. PHYSICAL REVIEW LETTERS, 1986, 56 (06) : 632 - 635