POLYMERIZATION FOR HIGHLY SELECTIVE SIO2 PLASMA-ETCHING

被引：22

作者：

SAMUKAWA, S ^{[1
]}

FURUOYA, S ^{[1
]}

机构：

[1] NEC CORP LTD, ULSI DEVICE DEV LABS, KANAGAWA 229, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1993年 / 32卷 / 9A期

关键词：

SIO2; ETCHING; HIGH-DENSITY PLASMA; ECR PLASMA;

D O I：

10.1143/JJAP.32.L1289

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, we report the relationships between polymerization on Si substrates and the generation ratio for reactive species in fluorocarbon plasma, and reveal essential points for SiO2 etching selectivity to underlying Si. The SiO2 etching selectivity to underlying Si is determined by both the fluoropolymer deposition rate and the sputtering rate on underlying Si. The sputtering rate strongly depends on the F atom concentration in the polymer. Conversely, the deposition rate depends on the CF2 radical density in the plasma. Therefore, control of the generation ratio of CF2 radicals to F atoms is needed to realize highly selective SiO2 etching.

引用

页码：L1289 / L1292

页数：4

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