STIMULATED-EMISSION OF II-VI EPITAXIAL LAYERS

被引：24

作者：

KLINGSHIRN, C

KALT, H

UMLAUFF, M

PETRI, W

MAJUMDER, FA

BOGDANOV, SV

LANGBEIN, W

GRUN, M

HETTERICH, M

GEYZERS, KP

HEUKEN, M

NAUMOV, A

STANZL, H

GEBHARDT, W

机构：

[1] RHEIN WESTFAL TH AACHEN,INST HALBLEITERTECH,D-52062 AACHEN,GERMANY

[2] UNIV REGENSBURG,INST PHYS 2,D-93053 REGENSBURG,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 138卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)90907-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

After a short review of the typical gain processes in II-VI semiconductors, we present examples for various compounds considering rather thick epilayers and superlattices. The observed gain processes include inelastic scattering processes, biexcitons and plasma formation.

引用

收藏

页码：786 / 790

页数：5

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