SIMPLE APPROXIMATION FOR TEMPERATURE DEPENDENCES OF NONRADIATIVE MULTIPHONON CARRIER-CAPTURE CROSS-SECTIONS OF DEEP TRAPS IN SEMICONDUCTORS

被引：4

作者：

PASSLER, R ^{[1
]}

机构：

[1] TECH HSCH KARL MARX STADT, SEKT PHYS ELEKTR BAUELEMENTE, LEIPZIG, GER DEM REP

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1978年 / 86卷 / 01期

关键词：

D O I：

10.1002/pssb.2220860161

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：K45 / K47

页数：3

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共 16 条

[1] ENERGY GAP LAW FOR RADIATIONLESS TRANSITIONS IN LARGE MOLECULES
ENGLMAN, R
JORTNER, J
[J]. MOLECULAR PHYSICS, 1970, 18 (02) : 145 - +
[2] GLINCHUK KD, 1962, FIZ TVERD TELA, V4, P3671
[3] HAUG A, 1970, THEORETISCHE FESTKOR
[4] NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP
HENRY, CH
LANG, DV
[J]. PHYSICAL REVIEW B, 1977, 15 (02): : 989 - 1016
[5] LASHKAREV VE, 1965, FIZ TVERD TELA+, V7, P1388
[6] THE FRANCK-CONDON PRINCIPLE AND ITS APPLICATION TO CRYSTALS
LAX, M
[J]. JOURNAL OF CHEMICAL PHYSICS, 1952, 20 (11) : 1752 - 1760
[7] PASSLER R, 1975, CZECH J PHYS, VB 25, P219, DOI 10.1007/BF01589478
[8] INTERMEDIATE-TEMPERATURE DEPENDENCES OF NONRADIATIVE MULTIPHONON CARRIER-CAPTURE CROSS-SECTIONS OF DEEP TRAPS IN SEMICONDUCTORS
PASSLER, R
[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1978, 86 (01): : K39 - K44
[9] CALCULATION OF NONRADIATIVE MULTIPHONON CAPTURE COEFFICIENTS AND IONIZATION RATES FOR NEUTRAL CENTERS ACCORDING TO STATIC COUPLING SCHEME .2. ALTERNATIVE TRAP MODELS
PASSLER, R
[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1976, 76 (02): : 647 - 659
[10] TEMPERATURE DEPENDENCES OF NONRADIATIVE MULTIPHONON CARRIER CAPTURE AND EJECTION PROPERTIES OF DEEP TRAPS IN SEMICONDUCTORS .1. THEORETICAL RESULTS
PASSLER, R
[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1978, 85 (01): : 203 - 215