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INTERMEDIATE-TEMPERATURE DEPENDENCES OF NONRADIATIVE MULTIPHONON CARRIER-CAPTURE CROSS-SECTIONS OF DEEP TRAPS IN SEMICONDUCTORS

被引：19
作者：
PASSLER, R
机构：
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1978年 / 86卷 / 01期
关键词：
D O I：
10.1002/pssb.2220860160
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：K39 / K44
页数：6
相关论文
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[9]   RELATIONSHIPS BETWEEN NONRADIATIVE MULTIPHONON CARRIER-CAPTURE PROPERTIES OF DEEP CHARGED AND NEUTRAL CENTERS IN SEMICONDUCTORS [J].
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[10]   CALCULATION OF NONRADIATIVE MULTIPHONON CAPTURE COEFFICIENTS AND IONIZATION RATES FOR NEUTRAL CENTERS ACCORDING TO STATIC COUPLING SCHEME .2. ALTERNATIVE TRAP MODELS [J].
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