MICROWAVE PROPERTIES OF SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS

[1] BAECHTOLD W, PRIVATE COMMUNICATIO

[2] BURNS JR, 1967, RCA REV, V28, P385

[3] DYNAMIC PERFORMANCE OF SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) : 82 - &

[4] MICROWAVE SILICON SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTOR [J]. ELECTRONICS LETTERS, 1968, 4 (17) : 362 - +

[5] DRANGEID KE, 1969, VERHANDLG PHYSIKAL G, V4, P198

[6] DRANGEID KE, 1968, OCT IEEE INT EL DEV

[7] DRANGEID KE, 1969, AFCRL690072 US AIR F, P22

[8] DRANGEID KE, 1969, MAR EUR M SEM DEV RE

[9] HACKBORN RA, 1968, MICROWAVE J, V11, P45

[10] CARRIER MOBILITY AND CURRENT SATURATION IN MOS TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (03) : 129 - +

[1] BAECHTOLD W, PRIVATE COMMUNICATIO

[2] BURNS JR, 1967, RCA REV, V28, P385

[3] DYNAMIC PERFORMANCE OF SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) : 82 - &

[4] MICROWAVE SILICON SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTOR [J]. ELECTRONICS LETTERS, 1968, 4 (17) : 362 - +

[5] DRANGEID KE, 1969, VERHANDLG PHYSIKAL G, V4, P198

[6] DRANGEID KE, 1968, OCT IEEE INT EL DEV

[7] DRANGEID KE, 1969, AFCRL690072 US AIR F, P22

[8] DRANGEID KE, 1969, MAR EUR M SEM DEV RE

[9] HACKBORN RA, 1968, MICROWAVE J, V11, P45

[10] CARRIER MOBILITY AND CURRENT SATURATION IN MOS TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (03) : 129 - +