MBE GROWTH AND CHARACTERIZATION OF INXGA1-XSB/INAS STRAINED LAYER SUPERLATTICES

被引：9

作者：

FASHE, R

ZBOROWSKI, JT

GOLDING, TD

SHIH, HD

CHOW, PC

MATSUICHI, K

COVINGTON, BC

CHI, A

ZHENG, J

SCHAAKE, HF

机构：

[1] UNIV HOUSTON,DEPT PHYS,HOUSTON,TX 77204

[2] SAM HOUSTON STATE UNIV,DEPT PHYS,HUNTSVILLE,TX 77341

[3] TEXAS INSTRUMENTS INC,CENT RES LABS,DALLAS,TX 75265

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 111卷 / 1-4期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1016/0022-0248(91)91062-F

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

An experimental investigation of the artificially structured In(x)G1-xSb/InAs strained layer superlattice (SLS) system proposed by Mailhiot and Smith in 1987 for long-wavelength infrared detection was carried out. The SLS structures were grown on GaSb(100) substrates using MBE and were characterized by reflection high-energy electron diffraction, Auger electron spectroscopy, double-crystal X-ray diffraction, Raman spectroscopy, transmission electron microscopy and Fourier transform infrared spectroscopy. Far infrared absorption was observed at a wavelength of 12.6-mu-m in a 25-period, 150 angstrom/150 angstrom [In0.2Ga0.8Sb/InAs] parallel-to GaSb(100) sample, thereby demonstrating the feasibility of this material system for long-wavelength infrared detection.

引用

页码：677 / 682

页数：6

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