NEGATIVE MAGNETORESISTANCE IN CHANNEL (100) SILICON INVERSION LAYERS

被引：27

作者：

EISELE, I ^{[1
]}

DORDA, G ^{[1
]}

机构：

[1] SIEMENS AG,FORSCH LAB,MUNICH,WEST GERMANY

来源：

关键词：

D O I：

10.1103/PhysRevLett.32.1360

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1360 / 1363

页数：4

共 15 条

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[4] DORDA G, TO BE PUBLISHED
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[6] GASANLI SM, 1972, FIZ TEKH POLUPROV, V6, P2010
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[8] KECHIEV MM, 1972, FIZ TEKH POL, V6, P1974
[9] EXPERIMENTAL STUDY OF OSCILLATORY VALUES OF G] OF A 2-DIMENSIONAL ELECTRON-GAS
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[J]. PHYSICAL REVIEW LETTERS, 1973, 31 (01) : 25 - 28
[10] GALVANOMAGNETIC EFFECTS IN N-GE IN IMPURITY CONDUCTION RANGE
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