GALVANOMAGNETIC EFFECTS IN N-GE IN IMPURITY CONDUCTION RANGE

被引：43

作者：

SLADEK, RJ

KEYES, RW

机构：

来源：

PHYSICAL REVIEW | 1961年 / 122卷 / 02期

关键词：

D O I：

10.1103/PhysRev.122.437

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

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页码：437 / &

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共 19 条

[1] THEORY OF THE GALVANOMAGNETIC EFFECTS IN GERMANIUM
ABELES, B
MEIBOOM, S
[J]. PHYSICAL REVIEW, 1954, 95 (01): : 31 - 37
[2] IMPURITY BAND CONDUCTION IN GERMANIUM AND SILICON
CONWELL, EM
[J]. PHYSICAL REVIEW, 1956, 103 (01): : 51 - 60
[3] LOW-TEMPERATURE IMPURITY CONDUCTION AND MAGNETORESISTIVITY IN N-TYPE GERMANIUM
CSAVINSZKY, P
[J]. PHYSICAL REVIEW, 1960, 119 (05): : 1605 - 1609
[4] RESISTIVITY AND HALL COEFFICIENT OF ANTIMONY-DOPED GERMANIUM AT LOW TEMPERATURES
FRITZSCHE, H
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 6 (01) : 69 - 80
[5] ELECTRICAL PROPERTIES OF GERMANIUM SEMICONDUCTORS AT LOW TEMPERATURES
FRITZSCHE, H
[J]. PHYSICAL REVIEW, 1955, 99 (02): : 406 - 419
[6] EFFECT OF SHEAR ON IMPURITY CONDUCTION IN N-TYPE GERMANIUM
FRITZSCHE, H
[J]. PHYSICAL REVIEW, 1960, 119 (06): : 1899 - 1900
[7] TRANSPORT PROPERTIES OF A MANY-VALLEY SEMICONDUCTOR
HERRING, C
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (02): : 237 - 290
[8] HERRING C, 1960, P INTERNATIONAL C SE
[9] THEORY OF RESISTIVITY AND HALL EFFECT AT VERY LOW TEMPERATURES
HUNG, CS
[J]. PHYSICAL REVIEW, 1950, 79 (04): : 727 - 728
[10] A THEORY OF IMPURITY CONDUCTION .2.
KASUYA, T
KOIDE, S
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1958, 13 (11) : 1287 - 1297