EFFECT OF SHEAR ON IMPURITY CONDUCTION IN N-TYPE GERMANIUM

被引：39

作者：

FRITZSCHE, H

机构：

来源：

PHYSICAL REVIEW | 1960年 / 119卷 / 06期

关键词：

D O I：

10.1103/PhysRev.119.1899

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1899 / 1900

页数：2

共 13 条

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[5] PIEZORESISTANCE OF N-TYPE GERMANIUM
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[6] FRITZSCHE H, UNPUB
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[8] ELECTRON SPIN RESONANCE OF AN IMPURITY LEVEL IN SILICON
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[9] SHALLOW IMPURITY STATES IN SILICON AND GERMANIUM
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[10] MILLER A, 1960, THESIS RUTGERS U