TEMPERATURE-DEPENDENCE OF GATE AND SUBSTRATE CURRENTS IN THE CHE CROSSOVER REGIME

This paper presents new experimental data on the bias and temperature dependence of gate (I-G) and substrate (I-B) currents in submicrometer n-MOSFET's at drain voltages much smaller than the Si-SiO2 energy barrier (V-DS much less than Phi(B)/q similar or equal to 3.15 V), In particular, we report simultaneous measurements of I-G and I-B in that part of the bias range conventionally defined ''channel hot electron'' regime (CHE) where I-B decreases for decreasing temperature (substrate current crossover regime), It is found that, at low V-DS, the two currents exhibit an opposite temperature dependence, unexplained by present models.