SIMULATION OF MOSFET LIFETIME UNDER AC HOT-ELECTRON STRESS

被引：41

作者：

KUO, MM

SEKI, K

LEE, PM

CHOI, JY

KO, PK

HU, CM

机构：

[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720

[2] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 07期

关键词：

D O I：

10.1109/16.3358

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1004 / 1011

页数：8

共 11 条

[1] A SIMPLE METHOD TO CHARACTERIZE SUBSTRATE CURRENT IN MOSFETS [J].

CHAN, TY ;

KO, PK ;

HU, C .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (12) :505-507

[2]

CHEN KL, 1986, IEEE T ELECTRON DEV, V33, P424, DOI 10.1109/T-ED.1986.22504

[3] HOT-CARRIER-INDUCED MOSFET DEGRADATION UNDER AC STRESS [J].

CHOI, JY ;

KO, PK ;

HU, CM .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (08) :333-335

[4] EFFECT OF OXIDE FIELD ON HOT-CARRIER-INDUCED DEGRADATION OF METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J].

CHOI, JY ;

KO, PK ;

HU, C .

APPLIED PHYSICS LETTERS, 1987, 50 (17) :1188-1190

[5]

Hoffmann K.R., 1984, IEDM, P104

[6] HOT-ELECTRON-INDUCED MOSFET DEGRADATION - MODEL, MONITOR, AND IMPROVEMENT [J].

HU, CM ;

TAM, SC ;

HSU, FC ;

KO, PK ;

CHAN, TY ;

TERRILL, KW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) :375-385

[7]

LEE PM, 1986, UCBERL M8649 MEM

[8]

SAKURAI T, 1985, FEB IEEE ISSCC, P272

[9] BSIM - BERKELEY SHORT-CHANNEL IGFET MODEL FOR MOS-TRANSISTORS [J].

SHEU, BJ ;

SCHARFETTER, DL ;

KO, PK ;

JENG, MC .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1987, 22 (04) :558-566

[10] THE EFFECT OF HIGH FIELDS ON MOS DEVICE AND CIRCUIT PERFORMANCE [J].

SODINI, CG ;

KO, PK ;

MOLL, JL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (10) :1386-1393

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