EFFECT OF OXIDE FIELD ON HOT-CARRIER-INDUCED DEGRADATION OF METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

被引：15

作者：

CHOI, JY

KO, PK

HU, C

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 17期

关键词：

D O I：

10.1063/1.97906

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1188 / 1190

页数：3

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共 3 条

[1] HOT-ELECTRON-INDUCED MOSFET DEGRADATION - MODEL, MONITOR, AND IMPROVEMENT [J].

HU, CM ;

TAM, SC ;

HSU, FC ;

KO, PK ;

CHAN, TY ;

TERRILL, KW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) :375-385

[2] AN EMPIRICAL-MODEL FOR DEVICE DEGRADATION DUE TO HOT-CARRIER INJECTION [J].

TAKEDA, E ;

SUZUKI, N .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (04) :111-113

[3] RELATIONSHIP BETWEEN HOT-ELECTRONS HOLES AND DEGRADATION OF P-CHANNEL AND N-CHANNEL MOSFETS [J].

TSUCHIYA, T ;

FREY, J .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (01) :8-11