THE EFFECT OF HIGH FIELDS ON MOS DEVICE AND CIRCUIT PERFORMANCE

[1] Baccarani G., 1982, International Electron Devices Meeting. Technical Digest, P278

[2] CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12): : 2192 - +

[3] CHATTERJEE PK, 1980, ELECTRON DEVIC LETT, V1, P220

[4] CHERN GJ, 1980, IEEE ELECTRON DEVICE, V1, P170

[5] VELOCITY OF SURFACE CARRIERS IN INVERSION-LAYERS ON SILICON [J]. SOLID-STATE ELECTRONICS, 1980, 23 (01) : 35 - 40

[6] COOPER JA, 1981, ELECTRON DEVIC LETT, V2, P171, DOI 10.1109/EDL.1981.25387

[7] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268

[8] MOS DEVICE AND TECHNOLOGY CONSTRAINTS IN VLSI [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 567 - 573

[9] Grove A S, 1967, PHYS TECHNOLOGY SEMI

[10] MODEL AND PERFORMANCE OF HOT-ELECTRON MOS-TRANSISTORS FOR VLSI [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 513 - 520

[1] Baccarani G., 1982, International Electron Devices Meeting. Technical Digest, P278

[2] CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12): : 2192 - +

[3] CHATTERJEE PK, 1980, ELECTRON DEVIC LETT, V1, P220

[4] CHERN GJ, 1980, IEEE ELECTRON DEVICE, V1, P170

[5] VELOCITY OF SURFACE CARRIERS IN INVERSION-LAYERS ON SILICON [J]. SOLID-STATE ELECTRONICS, 1980, 23 (01) : 35 - 40

[6] COOPER JA, 1981, ELECTRON DEVIC LETT, V2, P171, DOI 10.1109/EDL.1981.25387

[7] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268

[8] MOS DEVICE AND TECHNOLOGY CONSTRAINTS IN VLSI [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 567 - 573

[9] Grove A S, 1967, PHYS TECHNOLOGY SEMI

[10] MODEL AND PERFORMANCE OF HOT-ELECTRON MOS-TRANSISTORS FOR VLSI [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 513 - 520