VELOCITY OF SURFACE CARRIERS IN INVERSION-LAYERS ON SILICON

[1] ELECTRON AND HOLE DRIFT VELOCITY-MEASUREMENTS IN SILICON AND THEIR EMPIRICAL RELATION TO ELECTRIC-FIELD AND TEMPERATURE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) : 1045 - 1047

[2] CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12): : 2192 - +

[3] CARRIER MOBILITIES AT WEAKLY INVERTED SILICON SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) : 828 - 834

[4] COEN RW, M7936 ERL U CAL EL R

[5] HOT ELECTRON EFFECTS AND SATURATION VELOCITIES IN SILICON INVERSION LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) : 1825 - +

[6] KOMIYA Y, 1975, NAT CONV IECE JAPAN

[7] ELECTRON AND HOLE MOBILITIES IN INVERSION LAYERS ON THERMALLY OXIDIZED SILICON SURFACES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (05) : 248 - +

[8] MOBILITY PARAMETERS AND METAL-OXIDE-SEMICONDUCTOR-TRANSISTOR PROPERTIES [J]. ELECTRONICS LETTERS, 1972, 8 (24) : 599 - +

[9] SCHROEDER JE, 1969, JUN IEEE INT SOL ST

[10] THRESHOLD VOLTAGE VARIATIONS WITH TEMPERATURE IN MOS TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (06) : 386 - &

[1] ELECTRON AND HOLE DRIFT VELOCITY-MEASUREMENTS IN SILICON AND THEIR EMPIRICAL RELATION TO ELECTRIC-FIELD AND TEMPERATURE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) : 1045 - 1047

[2] CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12): : 2192 - +

[3] CARRIER MOBILITIES AT WEAKLY INVERTED SILICON SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) : 828 - 834

[4] COEN RW, M7936 ERL U CAL EL R

[5] HOT ELECTRON EFFECTS AND SATURATION VELOCITIES IN SILICON INVERSION LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) : 1825 - +

[6] KOMIYA Y, 1975, NAT CONV IECE JAPAN

[7] ELECTRON AND HOLE MOBILITIES IN INVERSION LAYERS ON THERMALLY OXIDIZED SILICON SURFACES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (05) : 248 - +

[8] MOBILITY PARAMETERS AND METAL-OXIDE-SEMICONDUCTOR-TRANSISTOR PROPERTIES [J]. ELECTRONICS LETTERS, 1972, 8 (24) : 599 - +

[9] SCHROEDER JE, 1969, JUN IEEE INT SOL ST

[10] THRESHOLD VOLTAGE VARIATIONS WITH TEMPERATURE IN MOS TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (06) : 386 - &