MOS DEVICE AND TECHNOLOGY CONSTRAINTS IN VLSI

[1] Chatterjee P. K., 1980, IEEE Electron Device Letters, VEDL-1, P220, DOI 10.1109/EDL.1980.25295

[2] HOT-ELECTRON EMISSION IN N-CHANNEL IGFETS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 442 - 455

[3] ONE-DIMENSIONAL THEORY ON EFFECTS OF DIFFUSION CURRENT AND CARRIER VELOCITY SATURATION ON E-TYPE IGFET CURRENT-VOLTAGE CHARACTERISTICS [J]. SOLID-STATE ELECTRONICS, 1977, 20 (09) : 781 - 788

[4] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268

[5] SURFACE CONDUCTION IN SHORT-CHANNEL MOS DEVICES AS A LIMITATION TO VLSI SCALING [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (02) : 254 - 266

[6] El-Mansy Y. A., 1981, 1981 Symposium on VLSI Technology. Digest of Technical Papers, P16

[7] NEW APPROACH TO THEORY AND MODELING OF INSULATED-GATE FIELD-EFFECT TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) : 241 - 253

[8] ELMANSY YA, 1975, IEDM, P31

[9] Hodges D. A., 1981, 1981 Symposium on VLSI Technology. Digest of Technical Papers, P42

[10] CURRENT-VOLTAGE CHARACTERISTICS OF SMALL SIZE MOS-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (03) : 382 - +

[1] Chatterjee P. K., 1980, IEEE Electron Device Letters, VEDL-1, P220, DOI 10.1109/EDL.1980.25295

[2] HOT-ELECTRON EMISSION IN N-CHANNEL IGFETS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 442 - 455

[3] ONE-DIMENSIONAL THEORY ON EFFECTS OF DIFFUSION CURRENT AND CARRIER VELOCITY SATURATION ON E-TYPE IGFET CURRENT-VOLTAGE CHARACTERISTICS [J]. SOLID-STATE ELECTRONICS, 1977, 20 (09) : 781 - 788

[4] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268

[5] SURFACE CONDUCTION IN SHORT-CHANNEL MOS DEVICES AS A LIMITATION TO VLSI SCALING [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (02) : 254 - 266

[6] El-Mansy Y. A., 1981, 1981 Symposium on VLSI Technology. Digest of Technical Papers, P16

[7] NEW APPROACH TO THEORY AND MODELING OF INSULATED-GATE FIELD-EFFECT TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) : 241 - 253

[8] ELMANSY YA, 1975, IEDM, P31

[9] Hodges D. A., 1981, 1981 Symposium on VLSI Technology. Digest of Technical Papers, P42

[10] CURRENT-VOLTAGE CHARACTERISTICS OF SMALL SIZE MOS-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (03) : 382 - +