CYCLOTRON-RESONANCE IN 2 INTERACTING ELECTRON-SYSTEMS WITH APPLICATION TO SI INVERSION LAYERS

被引:58
作者
APPEL, J [1 ]
OVERHAUSER, AW [1 ]
机构
[1] PURDUE UNIV,DEPT PHYS,W LAFAYETTE,IN 47907
来源
PHYSICAL REVIEW B | 1978年 / 18卷 / 02期
关键词
D O I
10.1103/PhysRevB.18.758
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:758 / 767
页数:10
相关论文
共 27 条
[1]   THE THEORY OF A FERMI LIQUID - (THE PROPERTIES OF LIQUID HE-3 AT LOW TEMPERATURES) [J].
ABRIKOSOV, AA ;
KHALATNIKOV, IM .
REPORTS ON PROGRESS IN PHYSICS, 1959, 22 :329-367
[2]  
ABSTREITER G, 1976, PHYS REV B, V14, P2480, DOI 10.1103/PhysRevB.14.2480
[3]   CYCLOTRON-RESONANCE OF ELECTRONS IN AN INVERSION LAYER ON SI [J].
ABSTREITER, G ;
KNESCHAUREK, P ;
KOTTHAUS, JP ;
KOCH, JF .
PHYSICAL REVIEW LETTERS, 1974, 32 (03) :104-107
[4]   FAR-INFRARED CYCLOTRON-RESONANCE IN INVERSION LAYER OF SILICON [J].
ALLEN, SJ ;
TSUI, DC ;
DALTON, JV .
PHYSICAL REVIEW LETTERS, 1974, 32 (03) :107-110
[5]  
ANDO T, 1977, 2ND INT C EL PROP 2, P1
[6]  
ANDO T, 1976, LECTURE NOTES U WURZ, P33
[7]   EFFECT OF HOLE-HOLE SCATTERING ON MOBILITY OF P-TYPE GERMANIUM [J].
APPEL, J ;
BRAY, R .
PHYSICAL REVIEW, 1962, 127 (05) :1603-&
[8]   ENERGY-BAND STRUCTURE OF GERMANIUM AND SILICON - K.P METHOD [J].
CARDONA, M ;
POLLAK, FH .
PHYSICAL REVIEW, 1966, 142 (02) :530-&
[9]   TEMPERATURE-DEPENDENCE OF DYNAMIC CONDUCTIVITY OF ELECTRONS IN SURFACE INVERSION LAYER OF SEMICONDUCTING SILICON [J].
GANGULY, AK ;
TING, CS .
PHYSICAL REVIEW B, 1977, 16 (08) :3541-3545
[10]  
Gurzhi R.N., 1959, SOV PHYS JETP, V35, P673