MECHANISM OF CLUSTER EMISSION IN SPUTTERING

被引：81

作者：

WITTMAACK, K ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICS LETTERS A | 1979年 / 69卷 / 05期

关键词：

D O I：

10.1016/0375-9601(79)90421-3

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The intensity and the energy distribution of Si+n cluster ions emitted from clean silicon have been measured for different target orientations as a function of the primary ion energy (3-30 keV) and the projectile mass (noble gas ion bombardment). The results favour the idea that clusters are emitted as such rather than being produced by vacuum recombination of individually emitted atoms and ions. © 1979.

引用

页码：322 / 325

页数：4

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