POSITRON DISTRIBUTION IN SEMICONDUCTORS

被引:31
作者
AOURAG, H
KHELIFA, B
BELAIDI, A
BELARBI, Z
机构
[1] UNIV ORAN ESSENIA,DEPT PHYS,OPT LAB,ES SENIA 31100,ALGERIA
[2] ECOLE NORMALE SUPER ENSEIGNEMENT,ORAN 31000,ALGERIA
[3] UNIV LYON 1,ELECTR SOLIDE LAB,F-69622 VILLEURBANNE,FRANCE
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1990年 / 160卷 / 01期
关键词
D O I
10.1002/pssb.2221600118
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The positron distribution of charge along the (111) direction is calculated for elemental and compound semiconductors. The results show that the positron has a strong affinity for one sort of atom in binary semiconductors. This relative positron affinity may lead to the positron preferentially annihilating with the electrons of that sort of atom in compound semiconductors. The trends in going from Ge to CdTe through GaAs show an increase in positron affinity for the anion over the cation. Copyright © 1990 WILEY‐VCH Verlag GmbH & Co. KGaA
引用
收藏
页码:201 / 209
页数:9
相关论文
共 17 条
[1]   POSITRON-ANNIHILATION IN SI AND GE [J].
AOURAG, H ;
BELAIDI, A ;
KOBAYASI, T ;
WEST, RN ;
KHELIFA, B .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1989, 155 (01) :191-200
[2]   ELECTRON AND POSITRON DISTRIBUTION FOR THE PLANE (110) IN SI AND GAAS [J].
AOURAG, H ;
BELAIDI, A ;
KOBAYASI, T ;
WEST, RN ;
KHELIFA, B .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1989, 156 (02) :497-505
[3]  
AOURAG H, 1987, THESIS U E ANGLIA
[4]   THE EFFECTS OF LATTICE ANISOTROPY ON POSITRON PARAMETERS IN IN-PB ALLOYS [J].
BELAIDI, A ;
WEST, RN .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 102 (01) :107-112
[5]   ANISOTROPY EFFECTS IN POSITRON AND VACANCY PARAMETERS IN IN-PB ALLOYS [J].
BELAIDI, A ;
WEST, RN .
JOURNAL OF PHYSICS F-METAL PHYSICS, 1988, 18 (05) :1001-1012
[6]   THE EFFECT OF PRECIPITATION ON POSITRON-ANNIHILATION IN PB-SN ALLOYS [J].
BELAIDI, A ;
LEIGHLY, HP ;
WEST, RN .
JOURNAL OF PHYSICS F-METAL PHYSICS, 1982, 12 (04) :813-819
[7]   POSITRON STUDY OF THE FERMI-SURFACE OF A NB50MO50 DISORDERED ALLOY [J].
BULL, CR ;
KAISER, JH ;
ALAM, A ;
SHIOTANI, N ;
WEST, RN .
PHYSICAL REVIEW B, 1984, 29 (11) :6378-6380
[8]   SPECIAL POINTS IN BRILLOUIN ZONE [J].
CHADI, DJ ;
COHEN, ML .
PHYSICAL REVIEW B, 1973, 8 (12) :5747-5753
[9]   NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].
CHELIKOWSKY, JR ;
COHEN, ML .
PHYSICAL REVIEW B, 1976, 14 (02) :556-582
[10]   ELECTRON MOMENTUM DISTRIBUTION IN SILICON AND GERMANIUM BY POSITRON ANNIHILATION [J].
ERSKINE, JC ;
MCGERVEY, JD .
PHYSICAL REVIEW, 1966, 151 (02) :615-&