POSITRON-ANNIHILATION IN SI AND GE

被引：36

作者：

AOURAG, H

BELAIDI, A

KOBAYASI, T

WEST, RN

KHELIFA, B

机构：

[1] ECOLE NORMALE SUPER ENSEIGNEMENT TECH ORAN,ORAN,ALGERIA

[2] COLL MED SCI,SENDAI 980,JAPAN

[3] UNIV TEXAS,DEPT PHYS,ARLINGTON,TX 76019

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1989年 / 155卷 / 01期

关键词：

D O I：

10.1002/pssb.2221550118

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：191 / 200

页数：10

共 7 条

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MCGERVEY, JD .

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[2]

HARTHOON R, 1976, J PHYS F MET PHYS, V6, P1147

[3]

LEEWHITING GE, 1955, PHYS REV, V91, P1557

[4] POSITRON-ANNIHILATION AND FERMI-SURFACE STUDIES - NEW APPROACH [J].

LOCK, DG ;

CRISP, VHC ;

WEST, RN .

JOURNAL OF PHYSICS F-METAL PHYSICS, 1973, 3 (03) :561-570

[5] NONLOCAL PSEUDOPOTENTIALS OF SI AND GE [J].

NARA, H ;

KOBAYASI, T .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1976, 41 (04) :1429-1430

[6] ASSUMPTION-INDEPENDENT SINGLE-PARTICLE WAVE FUNCTIONS FOR POSITRONS IN SOLIDS - APPLICATIONS TO ANGULAR DISTRIBUTIONS IN AL AND SI [J].

STROUD, D ;

EHRENREI.H .

PHYSICAL REVIEW, 1968, 171 (02) :399-&

[7]

WALTERS PA, 1984, THESIS U E ANGLIA

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