NONLOCAL PSEUDOPOTENTIALS OF SI AND GE

被引：15

作者：

NARA, H

KOBAYASI, T

机构：

[1] TOHOKU UNIV,COLL ARTS & SCI,DEPT PHYS,SENDAI,MIYAGI 980,JAPAN

[2] TOHOKU UNIV,COLL MED SCI,SENDAI,MIYAGI 980,JAPAN

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1976年 / 41卷 / 04期

关键词：

D O I：

10.1143/JPSJ.41.1429

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1429 / 1430

页数：2

共 13 条

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ASPNNES, DE ;

STUDNA, AA .

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[2] ELECTRONIC-STRUCTURE OF SILICON [J].

CHELIKOWSKY, JR ;

COHEN, ML .

PHYSICAL REVIEW B, 1974, 10 (12) :5095-5107

[3] ELECTRONIC-STRUCTURE OF GAAS [J].

CHELIKOWSKY, JR ;

COHEN, ML .

PHYSICAL REVIEW LETTERS, 1974, 32 (12) :674-677

[4] PHOTOEMISSION VALENCE-BAND DENSITIES OF STATES FOR SI, GE, AND GAAS USING SYNCHROTRON RADIATION [J].

GROBMAN, WD ;

EASTMAN, DE .

PHYSICAL REVIEW LETTERS, 1972, 29 (22) :1508-&

[5]

KOBAYASI T, TO BE PUBLISHED

[6] X-RAY PHOTOEMISSION SPECTRA OF CRYSTALLINE AND AMORPHOUS SI AND GE VALENCE BANDS [J].

LEY, L ;

SHIRLEY, DA ;

POLLAK, R ;

KOWALCZYK, S .

PHYSICAL REVIEW LETTERS, 1972, 29 (16) :1088-+

[7] ANALYSIS OF OPTICAL-SPECTRA OF DY3+ DOPED CALCIUM-FLUORIDE [J].

NARA, H ;

SCHLESINGER, M .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (05) :606-+

[8] SHALLOW DONOR POTENTIAL IN SILICON [J].

NARA, H ;

MORITA, A .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1966, 21 (09) :1852-&

[9]

NARA H, TO BE PUBLISHED

[10] NONLOCAL PSEUDOPOTENTIALS FOR GE AND GAAS [J].

PANDEY, KC ;

PHILLIPS, JC .

PHYSICAL REVIEW B, 1974, 9 (04) :1552-1559

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