ELECTRICAL AND ELECTROPHOTOGRAPHIC PROPERTIES OF CDSE/SETE AND CDSE/SE MULTILAYERS

Novel amorphous superlattices CdSe/SeTe and CdSe/Se are obtained. Small-angle x-ray diffraction measurements of these structures revealed that high quality superlattices with smooth interfaces were deposited. Parallel and perpendicular dark currents are measured. The changes of the activation energy and photoconductivity at small sublayer thicknesses are explained with quantum-size effect. The expansion of the spectral sensitivity toward the near-infrared region and fast photodischarge suggest that a-Se monolayer/superlattice structures would be perspective for electrophotographic and laser printer photoreceptors.