ANALYTICAL APPROXIMATIONS FOR AN ABRUPT PN JUNCTION UNDER HIGH-LEVEL CONDITIONS

[1] BARANOV LI, 1968, RADIO ENG ELECTRON P, V13, P1245

[2] THEORY OF A FORWARD-BIASED DIFFUSED-JUNCTION P-L-N RECTIFIER .2. ANALYTICAL APPROXIMATIONS [J]. SOLID-STATE ELECTRONICS, 1973, 16 (02) : 197 - 211

[3] CHOO SC, 1972, IEEE T ELECTRON DEVI, VED19, P954

[4] ANALYTICAL MODEL FOR P-N JUNCTIONS UNDER HIGH-INJECTION CONDITIONS [J]. ELECTRONICS LETTERS, 1971, 7 (18) : 509 - &

[5] Davis E.M., 1958, J ELECTRON CONTR, V4, P17

[6] AN ACCURATE NUMERICAL STEADY-STATE 1-DIMENSIONAL SOLUTION OF P-N JUNCTION [J]. SOLID-STATE ELECTRONICS, 1968, 11 (01) : 33 - +

[7] DUTTON RW, 1969, IEEE T ELECTRON DEVI, VED16, P458

[8] GAMANYUK VB, 1970, RADIO ENG ELECTRON P, V15, P550

[9] APPROXIMATIONS FOR ACCUMULATION AND INVERSION SPACE-CHARGE LAYERS IN SEMICONDUCTORS [J]. SOLID-STATE ELECTRONICS, 1968, 11 (07) : 667 - +

[10] Many A., 1965, SEMICONDUCTOR SURFAC

[1] BARANOV LI, 1968, RADIO ENG ELECTRON P, V13, P1245

[2] THEORY OF A FORWARD-BIASED DIFFUSED-JUNCTION P-L-N RECTIFIER .2. ANALYTICAL APPROXIMATIONS [J]. SOLID-STATE ELECTRONICS, 1973, 16 (02) : 197 - 211

[3] CHOO SC, 1972, IEEE T ELECTRON DEVI, VED19, P954

[4] ANALYTICAL MODEL FOR P-N JUNCTIONS UNDER HIGH-INJECTION CONDITIONS [J]. ELECTRONICS LETTERS, 1971, 7 (18) : 509 - &

[5] Davis E.M., 1958, J ELECTRON CONTR, V4, P17

[6] AN ACCURATE NUMERICAL STEADY-STATE 1-DIMENSIONAL SOLUTION OF P-N JUNCTION [J]. SOLID-STATE ELECTRONICS, 1968, 11 (01) : 33 - +

[7] DUTTON RW, 1969, IEEE T ELECTRON DEVI, VED16, P458

[8] GAMANYUK VB, 1970, RADIO ENG ELECTRON P, V15, P550

[9] APPROXIMATIONS FOR ACCUMULATION AND INVERSION SPACE-CHARGE LAYERS IN SEMICONDUCTORS [J]. SOLID-STATE ELECTRONICS, 1968, 11 (07) : 667 - +

[10] Many A., 1965, SEMICONDUCTOR SURFAC