THEORY OF A FORWARD-BIASED DIFFUSED-JUNCTION P-L-N RECTIFIER .2. ANALYTICAL APPROXIMATIONS

被引：19

作者：

CHOO, SC ^{[1
]}

机构：

[1] WESTINGHOUSE RES LABS,PITTSBURGH,PA 15235

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 02期

关键词：

D O I：

10.1016/0038-1101(73)90030-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：197 / 211

页数：15

相关论文

共 11 条

[1] ACCURATE NUMERICAL STEADY-STATE SOLUTIONS FOR A DIFFUSED 1-DIMENSIONAL JUNCTION DIODE
ARANDJELOVIC, V
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 865 - +
[2] CALCULATION OF MINORITY CARRIER CURRENT IN DIFFUSED EMITTER REGIONS
CHOO, SC
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (01) : 11 - +
[3] CHOO SC, 1972, IEEE T ELECTRON DEVI, VED19, P954
[4] ELECTRON-HOLE SCATTERING AT HIGH INJECTION-LEVELS IN GERMANIUM
DAVIES, LW
[J]. NATURE, 1962, 194 (4830) : 762 - &
[5] THE HIGH CURRENT LIMIT FOR SEMICONDUCTOR JUNCTION DEVICES
FLETCHER, NH
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (06): : 862 - 872
[6] ELECTRON-HOLE RECOMBINATION IN GERMANIUM
HALL, RN
[J]. PHYSICAL REVIEW, 1952, 87 (02): : 387 - 387
[7] FORWARD CHARACTERISTIC OF SILICON POWER RECTIFIERS AT HIGH CURRENT DENSITIES
HERLET, A
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (08) : 717 - &
[8] P+IN+ SILICON DIODES AT HIGH FORWARD CURRENT DENSITIES
HOWARD, NR
JOHNSON, GW
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (03) : 275 - &
[9] JONSHER AK, 1960, PRINCIPLES SEMICONDU, P154
[10] SCHARFETTER DL, 1969, T IEEE ELECTRON DEVI, VED16, P64