EFFECT OF ACID DIFFUSION ON PERFORMANCE IN POSITIVE DEEP-ULTRAVIOLET RESISTS

被引：78

作者：

FEDYNYSHYN, TH

THACKERAY, JW

GEORGER, JH

DENISON, MD

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 06期

关键词：

D O I：

10.1116/1.587569

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：3888 / 3894

页数：7

共 17 条

[1] CRONIN MF, 1994, P SOC PHOTO-OPT INS, V2195, P214, DOI 10.1117/12.175339
[2] RELATIONSHIP BETWEEN RESIST PERFORMANCE AND REACTION ORDER IN A CHEMICALLY AMPLIFIED RESIST SYSTEM
FEDYNYSHYN, TH
SZMANDA, CR
BLACKSMITH, RF
HOUCK, WE
ROOT, JC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (06): : 2798 - 2806
[3] THE RELATIONSHIP BETWEEN CRITICAL DIMENSION SHIFT AND DIFFUSION IN NEGATIVE CHEMICALLY AMPLIFIED RESIST SYSTEMS
FEDYNYSHYN, TH
CRONIN, MF
SZMANDA, CR
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (06): : 3380 - 3386
[4] FEDYNYSHYN TH, 1993, P SOC PHOTO-OPT INS, V1925, P2, DOI 10.1117/12.154742
[5] THE EFFECT OF DIFFUSION, REACTION ORDER, AND DEVELOPER SELECTIVITY ON THE PERFORMANCE OF POSITIVE DUV RESISTS
FEDYNYSHYN, TH
THACKERAY, JW
MORI, JM
[J]. MICROELECTRONIC ENGINEERING, 1994, 23 (1-4) : 315 - 320
[6] LAMOLA AA, 1991, SOLID STATE TECHNOL, V34, P53
[7] MACDONALD SA, 1991, P SOC PHOTO-OPT INS, V1466, P2, DOI 10.1117/12.46354
[8] NAKAMURA J, 1991, JPN J APPL PHYS, V30, P2919
[9] PRESS WH, 1992, NUMERICAL RECIPES C, P827
[10] DETERMINATION OF ACID DIFFUSION IN CHEMICAL AMPLIFICATION POSITIVE DEEP-UV RESISTS
SCHLEGEL, L
UENO, T
HAYASHI, N
IWAYANAGI, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (11B): : 3132 - 3137