DETERMINATION OF ACID DIFFUSION IN CHEMICAL AMPLIFICATION POSITIVE DEEP-UV RESISTS

被引:33
作者
SCHLEGEL, L
UENO, T
HAYASHI, N
IWAYANAGI, T
机构
[1] Central Research Laboratory, Hitachi Ltd, Kokubunji, Tokyo
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 11B期
关键词
POSITIVE RESIST; CHEMICAL AMPLIFICATION; ACID DIFFUSION; PHOTOACID GENERATOR; DISSOLUTION INHIBITOR; NOVOLAK;
D O I
10.1143/JJAP.30.3132
中图分类号
O59 [应用物理学];
学科分类号
摘要
The diffusion of photogenerated acid in chemical amplification resist systems was examined by a newly developed method which allowed an estimation of the diffusion range by simple means. The acid mobility was investigated for various process conditions. It was found that prebake and post-exposure-bake conditions have strong influence on the mobility of acid. The diffusion range of acid is much larger than values estimated from the catalytic volume. Large differences in diffusion characteristics were found for two different resist systems. The diffusion of various sulfonic acids decreased strongly with increasing molecule size.
引用
收藏
页码:3132 / 3137
页数:6
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