ACID FORMATION AND DEPROTECTION REACTION BY NOVEL SULFONATES IN A CHEMICAL AMPLIFICATION POSITIVE PHOTORESIST

被引：41

作者：

SCHLEGEL, L ^{[1
]}

UENO, T ^{[1
]}

SHIRAISHI, H ^{[1
]}

HAYASHI, N ^{[1
]}

IWAYANAGI, T ^{[1
]}

机构：

[1] HITACHI LTD, CENT RES LAB, HIGASHI KOIGAKUBO, KOKUBUNJI, TOKYO 185, JAPAN

来源：

CHEMISTRY OF MATERIALS | 1990年 / 2卷 / 03期

关键词：

D O I：

10.1021/cm00009a021

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In a positive deep-UV photoresist composed of tris(methanesulfonyloxy)benzene as a novel photo acid generator, bisphenol A protected with tert-butoxycarbonyl groups as a dissolution inhibitor, and a novolak matrix polymer, the deprotection reaction by the generated methanesulfonic acid was studied by using UV spectroscopy. The results were compared with exposure characteristics obtained with the same resist in lithography. The deprotection degree, the catalytic chain length of the deprotection reaction, and the quantum yield of the acid generation were determined. The amount of photogenerated acid was unexpectedly high. This could be due to a sensitizing effect of the strongly absorbing novolak matrix polymer to generate the acid with high efficiency. The results show that sulfonic acid esters have very high possibilities for application in deep-UV resist materials. © 1990, American Chemical Society. All rights reserved.

引用

页码：299 / 305

页数：7

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