EPITAXIAL-GROWTH OF PBTE ON (100) GAAS SUBSTRATES

被引：6

作者：

CLEMENS, H ^{[1
]}

OFNER, P ^{[1
]}

BAUER, G ^{[1
]}

HONG, JM ^{[1
]}

CHANG, LL ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

MATERIALS LETTERS | 1988年 / 7卷 / 04期

关键词：

D O I：

10.1016/0167-577X(88)90167-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：127 / 130

页数：4

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[9] MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF LEAD-TELLURIDE FOR LASER-DIODES [J].

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