MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF LEAD-TELLURIDE FOR LASER-DIODES

被引：30

作者：

PARTIN, DL

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1981年 / 10卷 / 02期

关键词：

D O I：

10.1007/BF02654796

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：313 / 325

页数：13

共 13 条

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[9] IMPURITY DOPANT INCORPORATION AND DIFFUSION DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF IV-VI SEMICONDUCTORS [J].

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[10] LOW CARRIER CONCENTRATION (PBSN)TE BY MOLECULAR-BEAM EPITAXY [J].

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