LOW CARRIER CONCENTRATION (PBSN)TE BY MOLECULAR-BEAM EPITAXY

被引：25

作者：

SMITH, DL ^{[1
]}

PICKHARDT, VY ^{[1
]}

机构：

[1] PERKIN ELMER CORP,NORWALK,CT 06856

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1976年 / 5卷 / 02期

关键词：

D O I：

10.1007/BF02652906

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：247 / 261

页数：15

共 25 条

[1] PARTIAL PRESSURES IN EQUILIBRIUM WITH GROUP 4 TELLURIDES .1. OPTICAL ABSORPTION METHOD + RESULTS FOR PBTE [J].

BREBRICK, RF ;

STRAUSS, AJ .

JOURNAL OF CHEMICAL PHYSICS, 1964, 40 (11) :3230-&

[2] PARTIAL PRESSURES IN EQUILIBRIUM WITH GROUP 4 TELLURIDES .2. TIN TELLURIDE [J].

BREBRICK, RF ;

STRAUSS, AJ .

JOURNAL OF CHEMICAL PHYSICS, 1964, 41 (01) :197-&

[3] METALLIC INCLUSIONS AND CELLULAR SUBSTRUCTURE IN PB1-XSNX TE SINGLE CRYSTALS [J].

BUTLER, JF ;

HARMAN, TC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (02) :260-&

[4]

CALAWA AR, 1968, T METALL SOC AIME, V242, P375

[5] VACUUM EPITAXIAL-GROWTH OF PB1-XSNXTE FILMS ON CLEAVED BAF2 SUBSTRATES [J].

CHAN, WS .

INFRARED PHYSICS, 1974, 14 (03) :177-181

[6] IMPURITY PROFILES OF GAAS EPITAXIAL LAYERS DOPED WITH SN, SI, AND GE GROWN WITH MOLECULAR-BEAM EPITAXY [J].

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) :1733-1735

[7] FILM DEPOSITION BY MOLECULAR-BEAM TECHNIQUES [J].

CHO, AY .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (05) :S31-&

[8] PBCHISN1-CHITE EPITAXIAL LAYERS BY RF MULTICATHODE SPUTTERING [J].

CORSI, C ;

ALFIERI, I ;

PETROCCO, G .

APPLIED PHYSICS LETTERS, 1974, 24 (10) :484-485

[9] CRYSTAL-GROWTH AND ISOTHERMAL ANNEALING OF PB1-XSNXTE ALLOYS [J].

DIONNE, G .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (06) :784-&

[10]

DUSHMAN S, 1962, SCI F VACUUM TECHNIQ, P21

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