INTERFACE PROPERTIES OF A-SI-H/SI3N4+X AND A-SI-H/SIO2 ELUCIDATED BY PLAS AND ITS IMPROVEMENT BY THE ATOMIC-HYDROGEN

被引：3

作者：

NITTA, S ^{[1
]}

MIYAZIMA, H ^{[1
]}

MUKAI, M ^{[1
]}

NONOMURA, S ^{[1
]}

GU, SQ ^{[1
]}

TAYLOR, PC ^{[1
]}

机构：

[1] UNIV UTAH,DEPT PHYS,SALT LAKE CITY,UT 84112

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80307-2

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Photoluminescence absorption spectroscopy (PLAS) is used to study the properties of the interface between a-Si:H and the insulating layer of a-Si3N4+X:H and a-SiOX:H (X approximately 1.8). The atomic hydrogen treatment in the interval to change the chemical gas in the process of the glow discharge deposition is confirmed to be effective to reduce the interface states between a-Si:H and a-Si3N4+X:H.

引用

页码：1071 / 1074

页数：4

共 12 条

[1]

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